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MITSUBISHI HVIGBT MODULES
CM1200HC-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HC-66H
q IC ................................................................ 1200A q VCES ....................................................... 3300V q Insulated Type q 1-element in a Pack q AISiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
570.1
190 0.5 1710.1 570.1
570.1
6 - M8 NUTS C 20 -0.2
+0.1
C
C
C
G E 124 0.1 140 0.5 40 0.2 E E E
C
C
C
CM C
E
E
E
CIRCUIT DIAGRAM
E
G
20.25 0.2 41.25 0.3 3 - M4 NUTS 79.4 0.3 61.5 0.3
screwing depth min. 7.7
8 - 7 0.1 MOUNTING HOLES
screwing depth min. 16.5
61.5 0.3 13 0.2
15 0.2 40 0.3 5.2 0.2
5 0.15
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
29.5 0.5
38 +1 0
28 +1 0
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25C VCE = 0V, Tj = 25C TC = 100C Pulse Pulse TC = 25C, IGBT part Conditions Ratings 3300 20 1200 2400 1200 2400 14700 -40 ~ +150 -40 ~ +125 -40 ~ +125 6000 10 Unit V V A A A A W C C C V s
(Note 1) (Note 1)
RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 2200V, VCES 3300V, VGE = 15V Tj = 125C
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Conditions VCE = VCES, VGE = 0V, Tj = 25C IC = 120mA, VCE = 10V, Tj = 25C VGE = VGES, VCE = 0V, Tj = 25C IC = 1200A, VGE = 15V, Tj = 25C IC = 1200A, VGE = 15V, Tj = 125C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25C VCC = 1650V, IC = 1200A, VGE = 15V, Tj = 25C IE = 1200A, VGE = 0V, Tj = 25C (Note 4) IE = 1200A, VGE = 0V, Tj = 125C (Note 4) VCC = 1650V, IC = 1200A, VGE = 15V RG(on) = 1.6, Tj = 125C, Ls = 100nH Inductive load VCC = 1650V, IC = 1200A, VGE = 15V RG(off) = 1.6, Tj = 125C, Ls = 100nH Inductive load VCC = 1650V, IC = 1200A, VGE = 15V RG(on) = 1.6, Tj = 125C, Ls = 100nH Inductive load Min -- 5.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 3.30 3.60 180 18.0 5.4 8.6 2.80 2.70 -- -- 1.60 -- -- 1.55 -- 800 0.90 Max 15 7.0 0.5 4.20 -- -- -- -- -- 3.60 -- 1.60 1.00 -- 2.50 1.00 -- 1.40 -- -- Unit mA V A V nF nF nF C V s s J/pulse s s J/pulse s C J/pulse
(Note 4) (Note 4)
VEC(Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2)
Note 1. 2. 3. 4.
Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150C). Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, grease = 1W/m*K Min -- -- -- Limits Typ -- -- 6.0 Max 8.5 17.0 -- Unit K/kW K/kW K/kW
MECHANICAL CHARACTERISTICS
Symbol Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 -- 600 19.5 32.0 -- -- Limits Typ -- -- -- 1.5 -- -- -- 10 0.16 Max 13.0 6.0 2.0 -- -- -- -- -- -- Unit
M -- CTI da ds LC-E(int) RC-E(int)
Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance
N*m kg -- mm mm nH m
IGBT part TC = 25C
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj = 125C 2000 2000 2400
TRANSFER CHARACTERISTICS (TYPICAL) VCE = 20V
COLLECTOR CURRENT (A)
1600
VGE = 15V
COLLECTOR CURRENT (A)
VGE = 20V VGE = 12V
1600
1200 VGE = 10V 800 VGE = 8V
1200
800
400
400 Tj = 25C Tj = 125C
0
0
1
2
3
4
5
6
0
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 6
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
6 VGE = 15V
EMITTER-COLLECTOR VOLTAGE (V)
5
5
4
4
3
3
2
2
1 Tj = 25C Tj = 125C 0 0 400 800 1200 1600 2000 2400
1 Tj = 25C Tj = 125C 0 0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CAPACITANCE CHARACTERISTICS (TYPICAL) 103
7 5 3 2
GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCC = 1650V, IC = 1200A Tj = 25C
VGE = 0V, Tj = 25C f = 100kHz Cies 16
CAPACITANCE (nF)
102
7 5 3 2
GATE-EMITTER VOLTAGE (V)
12
Coes 101
7 5 3 2
8
Cres
4
100 -1 10
23
5 7 100
23
5 7 101
23
5 7 102
0
0
3
6 GATE CHARGE (C)
9
12
COLLECTOR-EMITTER VOLTAGE (V)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3 VCC = 1650V, VGE = 15V RG(on) = RG(off) = 1.6 Tj = 125C, Inductive load 6 Eon 5 Eoff 2
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 1650V, IC = 1200A VGE = 15V Tj = 125C, Inductive load
Eon
2.5
SWITCHING ENERGIES (J/pulse)
SWITCHING ENERGIES (J/pulse)
4
1.5
3 Eoff
1
Erec
2
0.5
1 Erec
0
0
400
800
1200
1600
2000
2400
0
0
5
10
15
20
COLLECTOR CURRENT (A)
GATE RESISTANCE ()
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102
7 5 3 2
FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102
7 5
REVERSE RECOVERY TIME (s)
3 2
3 2
101
7 5 3 2
101
7 5 3 2
103 lrr
7 5 3 2
td(off)
100
7 5 3 2
td(on)
100
7 5 3 2
102 trr
7 5 3 2 5 7 102 5 7 103 5 7 104
tr tf
10-1 1 10
23
5 7 102
23
5 7 103
23
5 7 104
10-1 1 10
101
23
23
23
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2 Single Pulse, TC = 25C Rth(j-c)Q = 8.5K/kW Rth(j-c)R = 17K/kW
1.0
0.8
0.6
0.4
0.2
0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
REVERSE RECOVERY CURRENT (A)
VCC = 1650V, VGE = 15V RG(on) = RG(off) = 1.6 Tj = 125C, Inductive load
VCC = 1650V, VGE = 15V RG(on) = RG(off) = 1.6 Tj = 125C, Inductive load
104
7 5
SWITCHING TIMES (s)
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA (RBSOA) 3000 VCC 2200V, VGE = +/-15V Tj = 125C, RG(off) 1.6 3000
FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) VCC 2200V, di/dt 5400A/s Tj = 125C
2500
REVERSE RECOVERY CURRENT (A)
0 1000 2000 3000 4000
2500
COLLECTOR CURRENT (A)
2000
2000
1500
1500
1000
1000
500
500
0
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005

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